PART |
Description |
Maker |
KI4501ADY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 30V
|
TY Semiconductor Co., Ltd
|
KO8822 |
VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., L...
|
KDC6020C |
N-Channel:VDS=20V ID=5.9A P-Channel:VDS=-20V ID=-4.2A RDS(ON) 55m
|
TY Semiconductor Co., Ltd
|
ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包) MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V From old datasheet system MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
APM2701CG |
N-Channel:VDS=20V ID=3A P-Channel:VDS=-20V ID=-1.5A
|
TY Semiconductor Co., Ltd
|
FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
KI1555DL |
PIN Configuration Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., L...
|
KHP45N03LT |
Low on-state resistance Fast switching. Drain-Source Voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
IRSF3010 |
FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm)
|
IRF[International Rectifier]
|
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB
|
Infineon
|